BACKGROUND Erasable memories may have erasable elements that can become unreliable after a predetermined number of erase cycles. Thus, if one cell is erased dramatically more than other cells, that cell may be prone to earlier failure than the rest o…
BACKGROUND OF THE INVENTION Solid-state memory devices encompass rewritable non-volatile memory devices which may use electronic circuitry for storing data. Currently, solid-state memory devices start replacing conventional storage devices such as ha…
Techniques are presented that include determining, for data to be written to a nonvolatile memory, a location in the nonvolatile memory to which the data should be written based at least on one or more wear metrics corresponding to the location. The…
BACKGROUND OF THE INVENTION Conventional NAND Flash memories move data in the background to write over an entire span uniformly. The background data movement is called wear leveling. A process performing the background data movement is often referred…
参考:http://www.design-reuse.com/articles/24503/nand-flash-memory-embedded-systems.html Abstract : This paper presents fundamental information about NAND Flash memory used in Embedded Systems. It discusses various aspects of this storage media such as…
An I/O scheduler and a method for scheduling I/O requests to a solid-state drive (SSD) is disclosed. The I/O scheduler in accordance with the present disclosure bundles the write requests in such a form that the write requests in each bundle goes int…
